Doorka sulfur hexafluoride ee silikoon nitride etching

Sulfur hexafluoride waa gaas leh sifooyin aad u fiican oo inta badan loo isticmaalo bakhtiyaa-voltage-sare ee arc deminta iyo transformers, khadadka gudbinta korantada sare, transformers, iwm. . Hexafluoride sulfur-nadiifinta sare ee darajada elektiroonigga ah waa qalab elektaroonik ah oo ku habboon, kaas oo si weyn loogu isticmaalo goobta tignoolajiyada microelectronics. Maanta, tifaftiraha gaasta gaarka ah ee Niu Ruide Yueyue ayaa soo bandhigi doona codsiga sulfur hexafluoride ee silikoon nitride etching iyo saamaynta cabirrada kala duwan.

Waxaan ka wada hadlaynaa habka SF6 balaasmaha etching SiNx, oo ay ku jiraan beddelidda awoodda balaasmaha, saamiga gaaska ee SF6/He iyo ku darista gaaska cationic O2, ka wadahadlaan saamaynta ay ku leedahay heerka etching ee lakabka ilaalinta element SiNx ee TFT, iyo isticmaalka shucaaca balasmaha The spectrometer waxay falanqaysaa isbeddelada fiirsashada ee nooc kasta oo ku jira SF6/He, SF6/He/O2 plasma iyo heerka kala qaybsanaanta SF6, waxayna sahamisaa xidhiidhka ka dhexeeya isbeddelka SiNx heerka etching iyo diiradda noocyada plasma.

Daraasaduhu waxay ogaadeen in marka awoodda balaasmaha la kordhiyo, heerka etching ayaa kordhay; Haddii heerka socodka SF6 ee balaasmaha uu kordhay, diiradda F atomku wuu kordhiyaa waxaana si togan ula xidhiidha heerka etching. Intaa waxaa dheer, ka dib marka lagu daro gaaska cationic O2 ee hoos yimaada wadarta guud ee qulqulka go'an, waxay yeelan doontaa saameynta kordhinta heerka etching, laakiin marka la eego kala duwanaanta socodka socodka O2/SF6, waxaa jiri doona habab falcelin oo kala duwan, kuwaas oo loo qaybin karo saddex qaybood. : (1) Saamiga qulqulka O2/SF6 aad ayuu u yar yahay, O2 wuxuu caawin karaa kala-baxa SF6, heerka etching waqtigan wuu ka weyn yahay marka O2 aan lagu darin. (2) Marka saamiga socodka O2/SF6 uu ka weyn yahay 0.2 ilaa inta u dhaxaysa 1, wakhtigan, sababtoo ah qadarka badan ee kala-baxa SF6 si loo sameeyo F atamka, heerka etching ayaa ah midka ugu sarreeya; laakiin isla mar ahaantaana, atomyada O ee Plasma sidoo kale way sii kordhayaan oo Way fududahay in la sameeyo SiOx ama SiNxO (yx) oo leh dusha filimka SiNx, iyo inta badan O atamka kordhinta, atamka F ayaa aad ugu adkaan doona falcelinta cuncunka. Sidaa darteed, heerka etching wuxuu bilaabmaa inuu hoos u dhaco marka saamiga O2/SF6 uu ku dhow yahay 1. (3) Marka saamiga O2/SF6 uu ka weyn yahay 1, heerka etching ayaa hoos u dhacaya. Korodhka weyn ee O2 awgeed, atamyada F ee kala go'ay waxay isku dhacaan O2 iyo qaabka OF, taas oo yaraynaysa xoojinta atamyada F, taasoo keentay hoos u dhaca heerka etching. Waxaa taas laga arki karaa in marka O2 lagu daro, saamiga socodka O2/SF6 wuxuu u dhexeeyaa 0.2 iyo 0.8, waxaana la heli karaa heerka ugu fiican ee etching.