Doorka sulfur hexafluoride ee silikoon nitride etching

Sulfur hexafluoride waa gaas leh sifooyin aad u fiican oo inta badan loo isticmaalo bakhtiyaa-voltage-ka sare ee daminta iyo transformers, xadhkaha gudbinta korantada ee sare, transformers, iwm. Hexafluoride sulfur-nadiifinta sare ee darajada elektiroonigga ah waa qalab elektaroonik ah oo ku habboon, kaas oo si weyn loogu isticmaalo goobta tignoolajiyada microelectronics. Maanta, tifaftiraha gaasta gaarka ah ee Niu Ruide Yueyue ayaa soo bandhigi doona codsiga sulfur hexafluoride ee silikoon nitride etching iyo saamaynta cabirrada kala duwan.

Waxaan ka wada hadlaynaa habka SF6 plasma etching SiNx, oo ay ku jiraan beddelidda awoodda plasma, saamiga gaaska ee SF6 / He iyo ku darista gaaska cationic O2, ka wadahadlida saamaynta ay ku leedahay heerka etching ee lakabka ilaalinta element SiNx ee TFT, iyo isticmaalka shucaaca balasmaha spectrometer falanqeeyaan isbeddellada fiirsashada ee nooc kasta oo SF6 / He, SF6 / He / O2 ee sahaminta iyo isbeddelka plasma ee u dhexeeya SF6, heerka etching iyo diiradda noocyada plasma.

Daraasaduhu waxay ogaadeen in marka awoodda balaasmaha la kordhiyo, heerka etching ayaa kordhay; Haddii heerka socodka SF6 ee balaasmaha uu kordhay, xoogga F atomku wuu kordhiyaa oo si togan ula xidhiidha heerka etching. Intaa waxaa dheer, ka dib marka lagu daro gaaska cationic O2 ee hoos yimaada wadarta guud ee qulqulka go'an, waxay yeelan doontaa saamaynta kordhinta heerka etching, laakiin marka la eego kala duwanaanta socodka O2 / SF6, waxaa jiri doona habab falcelin oo kala duwan, kuwaas oo loo qaybin karo saddex qaybood: (2) Marka saamiga socodka O2/SF6 uu ka weyn yahay 0.2 ilaa inta u dhaxaysa 1, wakhtigan, sababtoo ah qadarka badan ee kala-baxa SF6 si loo sameeyo F atamka, heerka etching ayaa ah midka ugu sarreeya; laakiin isla mar ahaantaana, atomyada O ee Plasma sidoo kale way sii kordhayaan oo Way fududahay in la sameeyo SiOx ama SiNxO (yx) oo leh dusha filimka SiNx, iyo inta badan O atamka korodhka, atomyada F ayaa aad ugu adkaan doona falcelinta etching. Sidaa darteed, heerka etching wuxuu bilaabmaa inuu hoos u dhaco marka saamiga O2/SF6 uu ku dhow yahay 1. (3) Marka saamiga O2/SF6 uu ka weyn yahay 1, heerka etching ayaa hoos u dhacaya. Korodhka weyn ee O2 awgeed, atamyada F ee kala go'ay waxay isku dhacaan O2 iyo qaabka OF, taas oo yaraynaysa xoojinta atamyada F, taasoo keentay hoos u dhaca heerka etching. Waxaa taas laga arki karaa in marka O2 lagu daro, saamiga socodka O2/SF6 wuxuu u dhexeeyaa 0.2 iyo 0.8, waxaana la heli karaa heerka ugu fiican ee etching.